Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film

被引：226

作者：

Chang, S. H. ^{[1
,2
]}

Lee, J. S. ^{[3
]}

Chae, S. C. ^{[1
,2
]}

Lee, S. B. ^{[1
,2
]}

Liu, C. ^{[1
,2
]}

Kahng, B. ^{[3
]}

Kim, D. -W. ^{[4
,5
]}

Noh, T. W. ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea

[2] Seoul Natl Univ, FPRD, Dept Phys & Astron, Seoul 151747, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[4] Ewha Womans Univ, Div Nano Sci, Seoul 120750, South Korea

[5] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 102卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.102.026801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observed two types of reversible resistance switching (RS) effects in a NiO film: memory RS at low temperature and threshold RS at high temperature. We were able to control the type of RS effects by thermal cycling. These phenomena were explained using a new dynamic percolation model that can describe the rupture and formation of conducting filaments. We showed that the RS effects are governed by the thermal stability of the filaments, which arise from competition between Joule heating and thermal dissipation. This work provides us understandings on basic mechanism of the RS effects and their interrelation.

引用

页数：4

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