Magnetic tunnel junctions with an equiatomic quaternary CoFeMnSi Heusler alloy electrode

被引：58

作者：

Bainsla, Lakhan ^{[1
]}

Suzuki, Kazuya Z. ^{[1
,2
]}

Tsujikawa, Masahito ^{[2
,3
]}

Tsuchiura, Hiroki ^{[2
,4
]}

Shirai, Masafumi ^{[2
,3
]}

Mizukami, Shigemi ^{[1
,2
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Res Network, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Res Inst Elect Commun, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Sendai, Miyagi 9808579, Japan

来源：

APPLIED PHYSICS LETTERS | 2018年 / 112卷 / 05期

关键词：

SPIN-POLARIZATION; ROOM-TEMPERATURE; MAGNETORESISTANCE; COBALT; FILMS;

D O I：

10.1063/1.5002763

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel magnetoresistance (TMR) in MgO-based magnetic tunnel junctions (MTJs) with equiatomic quaternary CoFeMnSi Heusler and CoFe alloy electrodes is studied. The epitaxial MTJ stacking structures were prepared using ultrahigh-vacuum magnetron sputtering, where the CoFeMnSi electrode has a full B2 and partial L2(1) ordering crystal structure. Maximum TMR ratios of 101% and 521% were observed at room temperature and 10 K, respectively, for the MTJs. The large bias voltage dependence of the TMR ratio was also observed at low temperature (LT), as similarly observed in Co2MnSi Heusler alloy-based MTJs in the past. The physical origins of this relatively large TMR ratio at LT were discussed in terms of the half-metallicity of CoFeMnSi. Published by AIP Publishing.

引用

页数：5

共 43 条

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