Structural, dielectric, and insulating properties of barium strontium titanate thin films grown on various oriented LaAlO3 substrates

被引：23

作者：

Chen, Hongwei ^{[1
]}

Yang, Chuanren ^{[1
]}

Wang, Bo ^{[1
]}

Ji, Hong ^{[1
]}

Zhang, Jihua ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 03期

基金：

中国国家自然科学基金;

关键词：

atomic force microscopy; barium compounds; dielectric thin films; grain size; leakage currents; strontium compounds; texture; X-ray diffraction; MICROSTRUCTURE; BEHAVIOR;

D O I：

10.1063/1.3077267

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(Ba0.6Sr0.4)TiO3 (BST) thin films were deposited on (100) and (110) oriented LaAlO3 (LAO) single-crystal substrates by radio-frequency magnetron sputtering system, respectively. X-ray diffraction theta-2 theta and Phi-scans results showed that the BST thin films grown on LaAlO3 (100) displayed (h00) preferred orientation, while the films grown on LaAlO3 (110) indicated (110) preferred orientation. Atomic force microscope revealed that BST films grown on LAO (110) had smoother surface and smaller grain size than that BST films grown on LAO (100). Compared with BST films grown on LAO (100), the BST films grown on LAO (110) had higher tunability and better figure of merit. Additionally, the current-voltage (I-V) measurement indicated that the leakage current density of BST films grown on LAO (110) was obviously reduced compared to that of BST films grown on LAO (100).

引用

页数：5

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