Reduced graphene oxide-linked stacked polymer forests for high energy-density supercapacitor

被引:34
|
作者
Li, Li [1 ]
Zhang, Xin [2 ]
Qiu, Jingjing [3 ]
Weeks, Brandon L. [2 ]
Wang, Shiren [1 ]
机构
[1] Texas Tech Univ, Dept Ind Engn, Lubbock, TX 79409 USA
[2] Texas Tech Univ, Dept Chem Engn, Lubbock, TX 79409 USA
[3] Texas Tech Univ, Dept Mech Engn, Lubbock, TX 79409 USA
基金
美国国家科学基金会;
关键词
Supercapacitors; Graphene; Stacked polymer forest; Energy storage; Stack-dependence; DOUBLE-LAYER CAPACITOR; FACILE SYNTHESIS; STORAGE; POLYANILINE; PERFORMANCE; ARRAYS; NANOCOMPOSITES; CARBONS; METAL; FILMS;
D O I
10.1016/j.nanoen.2013.07.011
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Hierarchical nanostructured materials consisting of stacked polymer nanowires forests interconnected by monolayer graphene sheets were fabricated through bottom-up nanofabrication. Driven by external voltage, aniline molecules and graphene oxide were alternatively assembled for hierarchical porous stacked nanostructures while graphene oxide was in-situ reduced to graphene during the assembly process. Scanning electron microscopy and atomic force microscope results indicated that monolayer graphene sheets served as the transition nodes for the neighboring nanowire arrays. As-produced hierarchical nanostructures were used as supercapacitor electrodes, and stack-dependent device properties were discovered. In the organic electrolyte, specific energy density was increased and power density was maintained as the stack of forests increased at each scan rate. The specific energy density of as-produced supercapacitors was as high as 137 Wh/Kg while the power density was 1980 W/Kg. Further analysis found that the distinctive energy-storage behavior originated from the electrode/electrolyte interactions and the dependence on the diffusion and charge transferring process. This work pointed out a simple pathway to tailor electrode architecture for supercapacitors with both high energy density and high power density. (C) 2013 Elsevier Ltd. All rights reserved.
引用
收藏
页码:628 / 635
页数:8
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