Characterization and Modeling of 4H-SiC Lateral MOSFETs for Integrated Circuit Design

被引：36

作者：

Mudholkar, Mihir ^{[1
]}

Mantooth, H. Alan ^{[2
]}

机构：

[1] ON Semicond, Standard Prod Grp, Phoenix, AZ 85008 USA

[2] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2013年 / 60卷 / 06期

关键词：

Device characterization; device modeling; device simulation; MOSFET; silicon carbide (SiC); SILICON-CARBIDE; INTERFACE; DEVICES; TRAP;

D O I：

10.1109/TED.2013.2258287

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new process in 4H-SiC is developed that features n-type buried and inversion channel lateral MOSFETs that are fabricated with several different channel lengths (2-8 mu m) and widths (8-32 mu m) and characterized over a wide temperature range (25 degrees C-225 degrees C). It is shown that the on-resistance of enhancement-mode SiC MOSFETs reduces with temperature despite a reduction in inversion mobility because of the interaction of interface states with temperature. To enable integrated circuit development using the developed MOSFETs, their electrical characteristics are modeled over geometry and temperature using the industry standard PSP MOSFET model. A new mathematical formulation to describe the presence of the interface states is also developed and implemented in the PSP model, and excellent agreement is shown between measurement and simulation using the modified PSP model.

引用

页码：1923 / 1930

页数：8

共 20 条

[1]

[Anonymous], 2009, P 42 INT S MICR

[2] Effect of interface states on electron transport in 4H-SiC inversion layers [J].

Arnold, E ;

Alok, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) :1870-1877

[3]

Baliga J., 2005, SILICON CARBIDE POWE

[4]

Brown D. M., 2013, CMF10120D C IN PRESS

[5] High Temperature Silicon Carbide CMOS Integrated Circuits [J].

Clark, David T. ;

Ramsay, Ewan P. ;

Murphy, A. E. ;

Smith, D. A. ;

Thompson, R. F. ;

Young, R. A. R. ;

Cormack, J. D. ;

Zhu, C. ;

Finney, S. ;

Fletcher, J. .

SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 :726-+

[6] PSP: An advanced surface-potential-based MOSFET model for circuit simulation [J].

Gildenblat, Germady ;

Li, Xin ;

Wu, Weimin ;

Wang, Hailing ;

Jha, Amit ;

van Langevelde, Ronald ;

Smit, Geert D. J. ;

Scholten, Andries J. ;

Klaassen, Dirk B. M. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (09) :1979-1993

[7]

Hull B. A., 2009, P MAT SCI FOR, P749

[8]

Lam MP, 1999, IEEE T ELECTRON DEV, V46, P546, DOI 10.1109/16.748875

[9] Design and Characterization of High-Temperature ECL-Based Bipolar Integrated Circuits in 4H-SiC [J].

Lanni, Luigia ;

Ghandi, Reza ;

Malm, Bengt Gunnar ;

Zetterling, Carl-Mikael ;

Ostling, Mikael .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (04) :1076-1083

[10]

LI XD, 2009, NXPRTN200800299 U NX

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