Simultaneous double-sided deposition of HTS films on 3-inch wafers by ICM-sputtering

被引：22

作者：

Geerk, J

Ratzel, F

Rietschel, H

Linker, G

Heidinger, R

Schwab, R

机构：

[1] Forschungszentrum Karlsruhe, INFP, D-76021 Karlsruhe, Germany

[2] Forschungszentrum Karlsruhe, IMF 1, D-76021 Karlsruhe, Germany

来源：

IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY | 1999年 / 9卷 / 02期

关键词：

D O I：

10.1109/77.784688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The construction of a system which allows simultaneous deposition of HTS films on both sides of 3-inch wafers is described. The wafers are placed in a heating cavity which can be heated to 1000 degrees C. Deposition is accomplished through two opposite holes in the cavity by inverted cylindrical magnetron (ICM) sputtering guns. YBaCuO films deposited on 3 inch CeO2 buffered sapphire substrates revealed a growth quality and T-c and j(c) values comparable to standard films with sufficient uniformity on both sides of the wafer. The surface resistance of the films measured in the frequency range of 2.68 to 145 GHz is 20 m Omega at the highest frequency.

引用

页码：1543 / 1546

页数：4