Different Responses between Undoped and N-doped Few-layer Graphene Based Photonic Devices

被引：0

作者：

Wang, Wenrong ^{[1
]}

Li, Tie ^{[1
]}

Zhou, Yuxiu ^{[1
]}

Liang, Chen ^{[1
]}

Wang, Yuelin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Labs Transducer Technol, Sci & Technol Microsyst Lab, Shanghai, Peoples R China

来源：

2012 INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO) | 2012年

关键词：

graphene; CVD; photoconductive; photovoltaic;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, undoped and N-doped few-layer graphene (FLG) films were synthesized by ambient pressure chemical vapor deposition. The different photoresponse between these two kinds of FLG based photonic devices was discussed. Photoconductive and photovoltaic responses were found respectively in undoped and N-doped FLG based photonic devices. Under IR lamp illumination in vacuum, the resistance changed in undoped FLG based device while photocurrent at zero voltage bias was found in N-doped FLG based device. The photoconductive effect was enhanced as the temperature decreased, on the contrary, the photocurrent was found to decrease as the temperature decreased from room temperature to 78K.

引用

页码：117 / 120

页数：4

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