Compact integrated photonic components for λ=3-15 micron

Chemicals are best recognized by their unique wavelength specific optical absorption signatures in the molecular fingerprint region from lambda=3-15 mu m. In recent years, photonic devices on chips are increasingly being used for chemical and biological sensing. Silicon has been the material of choice of the photonics industry over the last decade due to its easy integration with silicon electronics as well as its optical transparency in the near-infrared telecom wavelengths. Silicon is optically transparent from 1.1 mu m to 8 mu m with research from several groups in the mid-IR. However, intrinsic material losses in silicon exceed 2dB/cm after lambda similar to 7 mu m (similar to 0.25dB/cm at lambda=6 mu m). In addition to the waveguiding core, an appropriate transparent cladding is also required. Available core-cladding choices such as Ge-GaAs, GaAs-AlGaAs, InGaAs-InP would need suspended membrane photonic crystal waveguide geometries. However, since the most efficient QCLs demonstrated are in the InP platform, the choice of InGaAs-InP eliminates need for wafer bonding versus other choices. The InGaAs-InP material platform can also potentially cover the entire molecular fingerprint region from lambda=315 mu m. At long wavelengths, in monolithic architectures integrating lasers, detectors and passive sensor photonic components without wafer bonding, compact passive photonic integrated circuit (PIC) components are desirable to reduce expensive epi material loss in passive PIC etched areas. In this paper, we consider miniaturization of waveguide bends and polarization rotators. We experimentally demonstrate suspended membrane subwavelength waveguide bends with compact sub-50 mu m bend radius and compact sub-300 mu m long polarization rotators in the InGaAs/InP material system. Measurements are centered at lambda=6.15 mu m for sensing ammonia.