A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

被引：7

作者：

Lee, Kiwon ^{[1
]}

Lee, Byoungwook ^{[2
]}

Yoon, Sunwoong ^{[2
]}

Hong, Jung-ho ^{[2
]}

Yang, Kyounghoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] I3system Inc, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 07期

关键词：

PHOTON DETECTOR; DIODE DETECTORS; MULTIPLICATION; SUPPRESSION; PERFORMANCE; DESIGN;

D O I：

10.7567/JJAP.52.072201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 30 条

[21] Numerical analysis of single photon detection avalanche photodiodes operated in the Geiger mode [J].

Sugihara, K ;

Yagyu, E ;

Tokuda, Y .

JOURNAL OF APPLIED PHYSICS, 2006, 99 (12)

[22] Analysis of Single-Photon-Detection Characteristics of GaInAs/InP Avalanche Photodiodes [J].

Sugihara, Kohei ;

Yagyu, Eiji ;

Nishioka, Tsuyoshi ;

Kurata, Tetsuyuki ;

Matsui, Mitsuru ;

Tokuda, Yasunori ;

Itoh, Kazuyoshi .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2010, 46 (10) :1444-1449

[23] PLANAR INP-INGAAS SINGLE-GROWTH AVALANCHE PHOTODIODES WITH NO GUARD RINGS [J].

TAROF, LE ;

BRUCE, R ;

KNIGHT, DG ;

YU, J ;

KIM, HB ;

BAIRD, T .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (11) :1330-1332

[24] Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes [J].

Tosi, A. ;

Acerbi, F. ;

Dalla Mora, A. ;

Itzler, M. A. ;

Jiang, X. .

IEEE PHOTONICS JOURNAL, 2011, 3 (01) :31-41

[25] InGaAs/InP Single-Photon Avalanche Diodes show low dark counts and require moderate cooling [J].

Tosi, A. ;

Dalla Mora, A. ;

Zappa, F. ;

Cova, S. ;

Itzler, M. A. ;

Jiang, X. .

QUANTUM SENSING AND NANOPHOTONIC DEVICES VI, 2009, 7222

[26] InGaAs/InP Single-Photon Avalanche Diode With Reduced Afterpulsing and Sharp Timing Response With 30 ps Tail [J].

Tosi, Alberto ;

Acerbi, Fabio ;

Anti, Michele ;

Zappa, Franco .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 2012, 48 (09) :1227-1232

[27] Improved free-running InGaAs/InP single-photon avalanche diode detectors operating at room temperature [J].

Warburton, R. E. ;

Itzler, M. A. ;

Buller, G. S. .

ELECTRONICS LETTERS, 2009, 45 (19) :996-U56

[28] Planar avalanche photodiode for long-haul single-photon optic fiber communications [J].

Yagyu, Eiji ;

Sugihara, Kohei ;

Nishioka, Tsuyoshi ;

Matsui, Mitsuru ;

Yoshiara, Kiichi ;

Tokuda, Yasunori .

APPLIED PHYSICS EXPRESS, 2008, 1 (01)

[29] A 1550 nm single-photon detector using a thermoelectrically cooled InGaAs avalanche photodiode [J].

Yoshizawa, A ;

Tsuchida, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (01) :200-201

[30] InGaAsSPAD and electronics for low time jitter and low noise [J].

Zappa, Franco ;

Tosi, Alberto ;

Cova, Sergio .

PHOTON COUNTING APPLICATIONS, QUANTUM OPTICS, AND QUANTUM CRYPTOGRAPHY, 2007, 6583

← 1 2 3 →