A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

被引：7

作者：

Lee, Kiwon ^{[1
]}

Lee, Byoungwook ^{[2
]}

Yoon, Sunwoong ^{[2
]}

Hong, Jung-ho ^{[2
]}

Yang, Kyounghoon ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn, Taejon 305701, South Korea

[2] I3system Inc, Taejon 305701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2013年 / 52卷 / 07期

关键词：

PHOTON DETECTOR; DIODE DETECTORS; MULTIPLICATION; SUPPRESSION; PERFORMANCE; DESIGN;

D O I：

10.7567/JJAP.52.072201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics

引用

页数：4

共 30 条

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