High Performance InP-based Ridge-Waveguide Distributed Feedback Lasers with InGaAs Multi-Quantum Wells emitting at 2004 nm

被引：0
|
作者：
Xu, Feng [1 ,2 ]
Yang, Tao [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing, Peoples R China
来源：
30TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY (IPC) | 2017年
关键词：
MU-M;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report on the fabrication and characterization of high performance InP-based ridgewaveguide distributed feedback lasers with InGaAs multi-quantum wells emitting at 2004 nm. By means of a relatively simple fabrication process, the device can operate stably with good performance.
引用
收藏
页码：635 / 636
页数：2
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