A microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator at 1.55 μm

被引：5

作者：

Stievater, T. H. ^{[1
]}

Park, D. ^{[1
]}

Pruessner, M. W. ^{[2
]}

Rabinovich, W. S. ^{[1
]}

Kanakaraju, S. ^{[3
]}

Richardson, C. J. K. ^{[3
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

[2] SFA Inc, Crofton, MD 21114 USA

[3] Lab Phys Sci, College Pk, MD 20740 USA

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 21期

关键词：

D O I：

10.1364/OE.16.016766

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Placing a quantum well modulator in an asymmetric Fabry-Perot cavity enables significantly higher contrast ratios than are possible in a conventional surface-normal quantum well modulator. However, fixed-cavity asymmetric Fabry-Perot quantum well modulators require extremely precise and uniform crystal growth and are sensitive to small fluctuations in temperature or angle of incidence. Here, we experimentally demonstrate an InP-based microelectromechanically tunable asymmetric Fabry-Perot quantum well modulator that operates in the optical C-band. By actuating a suspended InGa AlAs reflector, the cavity mode can be perfectly matched to the appropriate quantum well absorption wavelength. The devices exhibit contrast ratios over 30 (15 dB) at 8 volts quantum well bias and modulation speeds of 1 MHz. (C) 2008 Optical Society of America

引用

收藏

页码：16766 / 16773

页数：8

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