Current-voltage and ferroelectric Characteristics of Er2O3-doped Bi4Ti3O12 Ceramics

被引：0
|
作者：
Huang, C. Q. [1 ]
Liu, X. B. [1 ]
Mei, X. A. [1 ]
Liu, J. [1 ]
机构：
[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang 414000, Peoples R China
来源：
CHINESE CERAMICS COMMUNICATIONS III | 2013年 / 624卷
关键词：
ferroelectric; film; bismuth titanate; doping; LARGE REMANENT POLARIZATION; BISMUTH TITANATE; FILMS; MEMORIES;
D O I：
10.4028/www.scientific.net/AMR.624.162
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The electrical properties of Er2O3-doped bismuth titanate, Bi4-xExTi3O12 (BET) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.4 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-E hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.6 and 0.8 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (P-r) and coercive field (E-c) of the BET ceramic with x=0.8 were above 20 mu C/cm(2) and 65KV/cm, respectively.
引用
收藏
页码：162 / 165
页数：4
相关论文
共 50 条
  • [21] Electrical characteristics and microstructures of (Gd,Dy)-doped Bi4Ti3O12 ceramics
    Cai, Y. H.
    Mei, X. A.
    Chen, M.
    Su, K. L.
    An, W. K.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 88 - 90
  • [22] Ferroelectric properties and microstructures of Sm-doped Bi4Ti3O12 ceramics
    Chen, M
    Liu, ZL
    Wang, Y
    Wang, CC
    Yang, XS
    Yao, KL
    PHYSICA B-CONDENSED MATTER, 2004, 352 (1-4) : 61 - 65
  • [23] Leakage mechanisms in rare-earth (La, Nd) doped Bi4Ti3O12 ferroelectric ceramics
    Qi, Hongyan
    Qi, Yajun
    Xiao, Ming
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (03) : 1325 - 1330
  • [24] Electrical characteristics and microstructures of Pr6O11-doped Bi4Ti3O12 thin films
    陈敏
    黄可龙
    梅孝安
    黄重庆
    刘靖
    蔡安辉
    Transactions of Nonferrous Metals Society of China, 2009, 19 (01) : 138 - 142
  • [25] Electrical characteristics and microstructures of Pr6O11-doped Bi4Ti3O12 thin films
    Chen Min
    Huang Ke-long
    Mei Xiao-an
    Huang Chong-qing
    Liu Jing
    Cai An-hui
    TRANSACTIONS OF NONFERROUS METALS SOCIETY OF CHINA, 2009, 19 (01) : 138 - 142
  • [26] Large Remanent Polarization of Pm2O3-doped Bi4Ti3O12 Films
    Chen, M.
    Mei, X. A.
    Huang, C. Q.
    TESTING AND EVALUATION OF INORGANIC MATERIALS IV, 2014, 591 : 104 - 107
  • [27] Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films
    Chen, M.
    Cai, A. H.
    Mei, X. A.
    Su, K. L.
    Huang, C. Q.
    Wan, Z. M.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS VI, 2010, 434-435 : 281 - 284
  • [28] Direct observation of the ferroelectric polarization in the layered perovskite Bi4Ti3O12
    Urushihara, Daisuke
    Komabuchi, Mai
    Ishizawa, Nobuo
    Iwata, Makoto
    Fukuda, Koichiro
    Asaka, Toru
    JOURNAL OF APPLIED PHYSICS, 2016, 120 (14)
  • [29] Sintering Characteristics of La/Nd doped Bi4Ti3O12 Bismuth Titanate Ceramics
    Islam, Md. Aminul
    Gafur, M. A.
    Islam, M. Saidul
    SCIENCE OF SINTERING, 2015, 47 (02) : 175 - 186
  • [30] Improved ferroelectric and fatigue properties in Zr doped Bi4Ti3O12 thin films
    Chen, Jieyu
    Yun, Qi
    Gao, Wei
    Bai, Yulong
    Nie, Chenghong
    Zhao, Shifeng
    MATERIALS LETTERS, 2014, 136 : 11 - 14
12345