The determination of charge-carrier lifetime in silicon

被引：17

作者：

Klein, D. ^{[1
]}

Wuensch, F. ^{[1
]}

Kunst, M. ^{[1
]}

机构：

[1] Hahn Meitner Inst Berlin GmbH, Bereich Solare Energet SE5, D-14109 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2008年 / 245卷 / 09期

关键词：

D O I：

10.1002/pssb.200879544

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Contactless measurements of the photoconductance for the electrical characterization of silicon are discussed. The different techniques are presented and discussed. The theory for the interpretation of the measurement is given. By some exemplary experiments it is shown which information can be obtained from these measurements. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1865 / 1876

页数：12

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