Thermal Characterisation of AlGaN/GaN HEMT on Silicon Carbide Substrate for High Frequency Application

被引：0

作者：

Alim, Mohammad A. ^{[1
]}

Rezazadeh, Ali A. ^{[1
]}

Ali, Mayahsa M. ^{[1
]}

Sinulingga, Emerson P. ^{[1
]}

Kyabaggu, Peter B. ^{[1
]}

Zhang, Yongjian ^{[1
]}

Gaquiere, Christopher ^{[2
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Microwave & Commun Syst Grp, Manchester M13 9PL, Lancs, England

[2] Univ Lille, IEMN, Lille, France

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

AlGaN/GaN/SiC HEMT; on-wafer measurement; equivalent circuit parameter; temperature coefficient;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Temperature effect modelling and analysis have been carried out on 0.25 mu m gate length AlGaN/GaN HEMT grown on SiC substrate over the temperature range from - 40 to 150 degrees C by on-wafer S-parameter measurements up to 50 GHz. The temperature behaviour of the DC and equivalent circuit parameters including f(t) and f(max) were analyzed. The results provide some valuable insights for future design optimizations of advanced GaN based MMICs.

引用

页码：210 / 213

页数：4

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