Single crystal growth and characterizations of A3BC3D2O14-type compounds for piezoelectric applications

被引：12

作者：

Jung, IH ^{[1
]}

Kang, YH

Shim, KB

Yoshikawa, A

Fukuda, T

Auh, KH

机构：

[1] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] Hanyang Univ, Ceram Proc Res Ctr, Seoul 133791, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 9B期

关键词：

A(3)Nb(1-x)Ga(3+(5/3)x)Si(2)O(14) (A = Sr; Ca); micro pulling-down technique; Czochralski; defect; piezoelectric;

D O I：

10.1143/JJAP.40.5706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A(3)Nb(1-x)Ga(3+(5/3)x)Si(2)O(14) (ANGS, A = Sr, Ca) compounds were investigated as a function of Nb and Ga mole ratios and grown, using the micro pulling-clown (mu -PD) technique after being prepared by the conventional solid-state reaction. On the basis of the it-Pl) growth results, ANGS single crystals were grown by the Czoehralski method. The grown Sr3NbGa3Si2O14 (SNGS) and Ca3NbGa3Si2O14 (CNGS) the single crystals showed that they were isostructural to that of A(3)BC(3)D(2)O(14), Which had the space group P321. The lattice parameters of SNGS and CNGS were calculated to be a = 8.282, 8.087 and c = 5.073, 4.980 Angstrom, respectively. The defect distribution and piezoelectric properties of these crystals were measured.

引用

页码：5706 / 5709

页数：4

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