Multiple-gate SOI MOSFETs

被引：742
作者：
Colinge, JP [1 ]
机构：
[1] Univ Calif Davis, Dept Elect & Comp Engn, Davis, CA 95616 USA
来源：
SOLID-STATE ELECTRONICS | 2004年 / 48卷 / 06期
关键词：
SOI; silicon-on-insulator; MOSFET;
D O I：
10.1016/j.sse.2003.12.020
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In an ever increasing need for higher current drive and better short-channel characteristics, silicon-on-insulator MOS transistors are evolving from classical, planar, single-gate devices into three-dimensional devices with multiple gates (double-, triple- or quadruple-gate devices). The evolution and the properties of such devices are described and the emergence of a new class of MOSFETs, called triple-plus (3(+))-gate devices offer a practical solution to the problem of the ultimate, yet manufacturable, silicon MOSFET. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：897 / 905
页数：9
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