Growth of silicon nanowires by sputtering and evaporation methods

被引：4

作者：

Thuy Thi Nguyen ^{[1
]}

Anh Xuan Vuong ^{[1
]}

Luan Duc Mai ^{[1
]}

Tuan Hoang Nguyen ^{[1
]}

Tu Nguyen ^{[2
]}

Chien Duc Nguyen ^{[1
,2
]}

Lam Huu Nguyen ^{[1
,2
]}

机构：

[1] Hanoi Univ Sci & Technol, Sch Engn Phys, Hanoi 10000, Vietnam

[2] Hanoi Univ Sci & Technol, Adv Inst Sci & Technol, Hanoi 10000, Vietnam

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2013年 / 210卷 / 07期

关键词：

nanowires; photoluminescence; silicon; sputtering; thermal evaporation; SI NANOWIRES; OPTICAL-PROPERTIES; THERMAL EVAPORATION; GOLD; MECHANISM; WIRES;

D O I：

10.1002/pssa.201228730

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon nanowires (Si NWs) were fabricated on Si (111) surfaces using both magnetron sputtering and thermal evaporation methods. Au thin layers were deposited using the electron-beam (e-beam) evaporation method and used as metal catalysts. The Au particles were formed by annealing at high temperature; their dimensions depended on the Au layer thickness and affected the formation and dimension of Si NWs. Field emission scanning electron microscopy (FESEM) was used to characterize the Si NWs. Photoluminescence (PL) measurement was conducted to demonstrate the quantum confinement effect of the Si NWs.

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收藏

页码：1429 / 1432

页数：4

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