Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study

被引：6

作者：

Umeda, T. ^{[1
]}

Okamoto, M. ^{[2
]}

Yoshioka, H. ^{[2
]}

Kim, G-W. ^{[1
]}

Ma, S. ^{[1
]}

Arai, R. ^{[1
]}

Makino, T. ^{[3
]}

Ohshima, T. ^{[3
]}

Harada, S. ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Natl Inst Quantum & Radiol Sci & Technol QST, Takasaki, Gunma 3701292, Japan

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR | 2017年 / 80卷 / 01期

关键词：

CHANNEL MOBILITY;

D O I：

10.1149/08001.0147ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using electrically-detected-magnetic-resonance spectroscopy and a device simulation, we studied dominant interface defects, named "C-face defects," in C-face 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The C-face defects act as hole traps via their donor levels, when they are not passivated by hydrogen atoms. The densities of unpassivated C-face defects were estimated to be from 4x10(12) cm(-2) to 13x10(12) cm(-2) in various C-face MOSFETs, which correlated with negative threshold-voltage (V-th) shifts. We explained influences of the C-face defects on the V-th instability and the channel mobility of C-face MOSFETs.

引用

页码：147 / 153

页数：7

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