Interface Defects in C-face 4H-SiC MOSFETs: An Electrically-Detected-Magnetic-Resonance Study

被引：6

作者：

Umeda, T. ^{[1
]}

Okamoto, M. ^{[2
]}

Yoshioka, H. ^{[2
]}

Kim, G-W. ^{[1
]}

Ma, S. ^{[1
]}

Arai, R. ^{[1
]}

Makino, T. ^{[3
]}

Ohshima, T. ^{[3
]}

Harada, S. ^{[2
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[3] Natl Inst Quantum & Radiol Sci & Technol QST, Takasaki, Gunma 3701292, Japan

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 15: IN MEMORY OF SAMARES KAR | 2017年 / 80卷 / 01期

关键词：

CHANNEL MOBILITY;

D O I：

10.1149/08001.0147ecst

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using electrically-detected-magnetic-resonance spectroscopy and a device simulation, we studied dominant interface defects, named "C-face defects," in C-face 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). The C-face defects act as hole traps via their donor levels, when they are not passivated by hydrogen atoms. The densities of unpassivated C-face defects were estimated to be from 4x10(12) cm(-2) to 13x10(12) cm(-2) in various C-face MOSFETs, which correlated with negative threshold-voltage (V-th) shifts. We explained influences of the C-face defects on the V-th instability and the channel mobility of C-face MOSFETs.

引用

页码：147 / 153

页数：7

共 50 条

[11] Recombination defects at the 4H-SiC/SiO2 interface investigated with electrically detected magnetic resonance and ab initio calculations
Cottom, J.
Gruber, G.
Pobegen, G.
Aichinger, T.
Shluger, A. L.
JOURNAL OF APPLIED PHYSICS, 2018, 124 (04)
[12] Homoepitaxial growth on a 4H-SiC C-face substrate
Kojima, Kazutoshi
Kuroda, Satoshi
Okumura, Hajime
Arai, Kazuo
CHEMICAL VAPOR DEPOSITION, 2006, 12 (8-9) : 489 - 494
[13] Improved MOS interface properties of C-face 4H-SiC by POCl3 annealing
Kotake, Shinya
Yano, Hiroshi
Okamoto, Dai
Hatayama, Tomoaki
Fuyuki, Takashi
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 425 - 428
[14] Ionizing Radiation Effects in 4H-SiC nMOSFETs Studied With Electrically Detected Magnetic Resonance
Waskiewicz, Ryan J.
Anders, Mark A.
Lenahan, Patrick M.
Lelis, Aivars J.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (01) : 197 - 203
[15] 4H-SiC Epitaxial Growth on C-face 150 mm SiC Substrate
Miyasaka, Akira
Norimatsu, Jun
Fukada, Keisuke
Tajima, Yutaka
Kageshima, Yoshiaki
Muto, Daisuke
Odawara, Michiya
Okano, Taichi
Momose, Kenji
Osawa, Yuji
Osawa, Hiroshi
Sato, Takayuki
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 193 - 196
[16] Electrically detected magnetic resonance studies of processing variations in 4H SiC based MOSFETs
Cochrane, Corey J.
Lenahan, Patrick M.
Lelis, Aivars J.
2007 INTERNATIONAL SEMICONDUCTOR DEVICE RESEARCH SYMPOSIUM, VOLS 1 AND 2, 2007, : 497 - +
[17] Electrically Detected Magnetic Resonance Studies of Processing Variations in 4H SiC Based MOSFETs
Cochrane, C. J.
Lenahan, P. M.
Lelis, A. J.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 719 - +
[18] Influence of low temperature oxidation and nitrogen passivation on the MOS interface of C-face 4H-SiC
Lee, Kung-Yen
Chang, Yu-Hao
Huang, Yan-Hao
Wu, Shuen-De
Chung, Cheng Yueh
Huang, Chih-Fang
Lee, Tai-Chou
APPLIED SURFACE SCIENCE, 2013, 282 : 126 - 132
[19] Comparison of dislocation behavior in Si- and C-face 4H-SiC
Chen, Bin
Matsuhata, Hirofumi
Sekiguchi, Takashi
Ohyanagi, Takasumi
Kinoshita, Akimasa
Okumura, Hajime
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 4, 2011, 8 (04): : 1278 - 1281
[20] Electrically detected ESR study of interface defects in 4H-SiC metal-oxide-semiconductor field effect transistor
Umeda, T.
Esaki, K.
Kosugi, R.
Fukuda, K.
Morishita, N.
Oshima, T.
Isoya, J.
SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 370 - +

← 1 2 3 4 5 →