Properties of Fe-doped semi-insulating GaN structures

被引：26

作者：

Polyakov, AY

Smirnov, NB

Govorkov, AV

Pearton, SJ

机构：

[1] Inst Rare Met, Moscow 119017, Russia

[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2004年 / 22卷 / 01期

关键词：

D O I：

10.1116/1.1633776

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The properties of semi-insulating GaN films with the lower part of the film doped with Fe are reported. The 300 K sheet resistivity of the films was 2 X 10(10) Omega/square with an activation energy of the dark conductivity of 0.5 eV The Fermi level is also pinned at E-C-0.5 eV. The concentration of the 0.5 eV traps in the Fe-doped portion of the films was 3 X 10(16) cm(-3). Also present is a high concentration of deeper electron traps with the level near 0.9 eV below the bottom of the conduction band and of hole traps with the level near 0.9 eV above the top of the valence band. Intracenter transitions of the Fe3+ center are observed in the photoluminescence spectra from the material. (C) 2004 American Vacuum Society.

引用

页码：120 / 125

页数：6

共 36 条

[1] PHOTOLUMINESCENCE OF RESIDUAL TRANSITION-METAL IMPURITIES IN GAN [J].

BAUR, J ;

KAUFMANN, U ;

KUNZER, M ;

SCHNIEDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1995, 67 (08) :1140-1142

[2] INFRARED LUMINESCENCE OF RESIDUAL IRON DEEP-LEVEL ACCEPTORS IN GALLIUM NITRIDE (GAN) EPITAXIAL LAYERS [J].

BAUR, J ;

MAIER, K ;

KUNZER, M ;

KAUFMANN, U ;

SCHNEIDER, J ;

AMANO, H ;

AKASAKI, I ;

DETCHPROHM, T ;

HIRAMATSU, K .

APPLIED PHYSICS LETTERS, 1994, 64 (07) :857-859

[3]

BERMAN LS, 1981, CAPACITANCE SPECTROS

[4] Trapping effects and microwave power performance in AlGaN/GaN HEMTs [J].

Binari, SC ;

Ikossi, K ;

Roussos, JA ;

Kruppa, W ;

Park, D ;

Dietrich, HB ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :465-471

[5] Current instabilities in GaN-based devices [J].

Daumiller, I ;

Theron, D ;

Gaquière, C ;

Vescan, A ;

Dietrich, R ;

Wieszt, A ;

Leier, H ;

Vetury, R ;

Mishra, UK ;

Smorchkova, IP ;

Keller, S ;

Nguyen, NX ;

Nguyen, C ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (02) :62-64

[6] Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's [J].

Daumiller, I ;

Kirchner, C ;

Kamp, M ;

Ebeling, KJ ;

Kohn, E .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (09) :448-450

[7] Undoped AlGaN/GaN HEMTs for microwave power amplification [J].

Eastman, LF ;

Tilak, V ;

Smart, J ;

Green, BM ;

Chumbes, EM ;

Dimitrov, R ;

Kim, H ;

Ambacher, OS ;

Weimann, N ;

Prunty, T ;

Murphy, M ;

Schaff, WJ ;

Shealy, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :479-485

[8] Effects of Sc2O3 and MgO passivation layers on the output power of AlGaN/GaN HEMTs [J].

Gillespie, JK ;

Fitch, RC ;

Sewell, J ;

Dettmer, R ;

Via, GD ;

Crespo, A ;

Jenkins, TJ ;

Luo, B ;

Mehandru, R ;

Kim, J ;

Ren, F ;

Gila, BP ;

Onstine, AH ;

Abernathy, CR ;

Pearton, SJ .

IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) :505-507

[9] The Mn3+/2+ acceptor level in group III nitrides [J].

Graf, T ;

Gjukic, M ;

Brandt, MS ;

Stutzmann, M ;

Ambacher, O .

APPLIED PHYSICS LETTERS, 2002, 81 (27) :5159-5161

[10] The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMT's [J].

Green, BM ;

Chu, KK ;

Chumbes, EM ;

Smart, JA ;

Shealy, JR ;

Eastman, LF .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (06) :268-270

← 1 2 3 4 →