Electrical characterization of beryllium doped low temperature MBE grown GaAs

被引：3

作者：

Cich, MJ ^{[1
]}

Zhao, R ^{[1
]}

Park, Y ^{[1
]}

Specht, P ^{[1
]}

Weber, ER ^{[1
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

来源：

EPITAXIAL GROWTH-PRINCIPLES AND APPLICATIONS | 1999年 / 570卷

关键词：

D O I：

10.1557/PROC-570-129

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of low temperature MBE grown GaAs (LT-GaAs) in the n-i-n configuration have been studied. The mechanism of current rise in beryllium doped LT-GaAs is found to fit Frenkel-Poole type emission with a barrier height of 0.26 eV. However, this model does not fit undoped LT-GaAs. The breakdown field is considerably higher (up to 5.2*10(5) V/cm) for beryllium doped films than undoped films, and depends on both growth temperature and beryllium concentration. Beryllium doping is also found to increase the resistivity of the preannealed films to values >10(9) Omega-cm.

引用

页码：129 / 134

页数：6

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