Fabrication and Characteristic of a Double Piezoelectric Layer Acceleration Sensor Based on Li-Doped ZnO Thin Film

被引：14

作者：

Ai, Chunpeng ^{[1
]}

Zhao, Xiaofeng ^{[1
]}

Li, Sen ^{[1
]}

Li, Yi ^{[1
]}

Bai, Yinnan ^{[1
]}

Wen, Dianzhong ^{[1
]}

机构：

[1] Heilongjiang Univ, Key Lab Elect Engn Coll Heilongjiang Prov, Harbin 150006, Heilongjiang, Peoples R China

来源：

MICROMACHINES | 2019年 / 10卷 / 05期

基金：

中国国家自然科学基金;

关键词：

cantilever beam; MEMS technology; Li-doped ZnO thin film; double piezoelectric layer; acceleration sensor; HIGH-SENSITIVITY; MEMS; ACCELEROMETER; DESIGN; PERFORMANCE;

D O I：

10.3390/mi10050331

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this paper, a double piezoelectric layer acceleration sensor based on Li-doped ZnO (LZO) thin film is presented. It is constituted by Pt/LZO/Pt/LZO/Pt/Ti functional layers and a Si cantilever beam with a proof mass. The LZO thin films were prepared by radio frequency (RF) magnetron sputtering. The composition, chemical structure, surface morphology, and thickness of the LZO thin film were analyzed. In order to study the effect of double piezoelectric layers on the sensitivity of the acceleration sensor, we designed two structural models (single and double piezoelectric layers) and fabricated them by using micro-electro-mechanical system (MEMS) technology. The test results show that the resonance frequency of the acceleration sensor was 1363 Hz. The sensitivity of the double piezoelectric layer was 33.1 mV/g, which is higher than the 26.1 mV/g of single piezoelectric layer sensitivity, both at a resonance frequency of 1363 Hz.

引用

页数：13

共 46 条

[1] Reinforced piezoresistive pressure sensor for ocean depth measurements [J].

Aravamudhan, Shyam ;

Bhansali, Shekhar .

SENSORS AND ACTUATORS A-PHYSICAL, 2008, 142 (01) :111-117

[2] Effect of different concentration Li-doping on the morphology, defect and photovoltaic performance of Li-ZnO nanofibers in the dye-sensitized solar cells [J].

Bhattacharjee, Ripon ;

Hung, I-Ming .

MATERIALS CHEMISTRY AND PHYSICS, 2014, 143 (02) :693-701

[3] Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors [J].

Boyadjiev, S. I. ;

Georgieva, V. ;

Yordanov, R. ;

Raicheva, Z. ;

Szilagyi, I. M. .

APPLIED SURFACE SCIENCE, 2016, 387 :1230-1235

[4] Li-doped Cu2O/ZnO heterojunction for flexible and semi-transparent piezoelectric nanogenerators [J].

Cho, Kyung-Su ;

Kim, Doo-Hee ;

Kim, Young-Hwan ;

Nah, Junghyo ;

Kim, Han-Ki .

CERAMICS INTERNATIONAL, 2017, 43 (02) :2279-2287

[5] Systematic XPS studies of metal oxides, hydroxides and peroxides [J].

Dupin, JC ;

Gonbeau, D ;

Vinatier, P ;

Levasseur, A .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2000, 2 (06) :1319-1324

[6] Design and modeling of a novel high sensitive MEMS piezoelectric vector hydrophone [J].

Ganji, Bahram Azizollah ;

Nateri, Mojtaba Shams ;

Dardel, Morteza .

MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2018, 24 (04) :2085-2095

[7] On the design of a MEMS piezoelectric accelerometer coupled to the middle ear as an implantable sensor for hearing devices [J].

Gesing, A. L. ;

Alves, F. D. P. ;

Paul, S. ;

Cordioli, J. A. .

SCIENTIFIC REPORTS, 2018, 8

[8] Positron annihilation studies of vacancy-type defects and room temperature ferromagnetism in chemically synthesized Li-doped ZnO nanocrystals [J].

Ghosh, S. ;

Khan, Gobinda Gopal ;

Mandal, K. ;

Thapa, Samudrajit ;

Nambissan, P. M. G. .

JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 590 :396-405

[9] Study on the doping effect of Li-doped ZnO film [J].

Jeong, S. H. ;

Park, B. N. ;

Lee, S. -B. ;

Boo, J. -H. .

THIN SOLID FILMS, 2008, 516 (16) :5586-5589

[10] A Novel Rotation Scheme for MEMS IMU Error Mitigation Based on a Missile-Borne Rotation Semi-Strapdown Inertial Navigation System [J].

Jing, Zhengyao ;

Li, Jie ;

Zhang, Xi ;

Feng, Kaiqiang ;

Zheng, Tao .

SENSORS, 2019, 19 (07)

← 1 2 3 4 5 →