Influence of the minimization of self-scattering events on the Monte Carlo simulation of carrier transport in III-V semiconductors

被引：2

作者：

Miranda, JM ^{[1
]}

Lin, C

Shaalan, M

Hartnagel, HL

Sebastián, JL

机构：

[1] Univ Complutense Madrid, Fac Fis, Dept Fis Applicata 3, E-28040 Madrid, Spain

[2] Tech Univ Darmstadt, Inst Hochfrequenztech, D-64283 Darmstadt, Germany

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1999年 / 14卷 / 09期

关键词：

D O I：

10.1088/0268-1242/14/9/310

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a procedure to improve the algorithm of Sangiorgi, Ricco and Venturi for the calculation of the time of flight in Monte Carlo simulations. The method is used to efficiently optimize the step function in which the total scattering probability is discretized. The optimization criterion suggested in this work can reduce the self-scattering events to less than 30% in a fairly wide range of temperatures, applied fields and doping levels. Different examples are presented to illustrate the advantages of the method.

引用

页码：804 / 808

页数：5

共 20 条

[1]

ADACHI S, 1992, PHYSICAL PROPERTIES

[2] MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .2. SUBMICROMETER MOSFETS [J].

FISCHETTI, MV ;

LAUX, SE .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :650-660

[3] MONTE-CARLO SIMULATION OF TRANSPORT IN TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS OF THE DIAMOND AND ZINCBLENDE STRUCTURES .1. HOMOGENEOUS TRANSPORT [J].

FISCHETTI, MV .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (03) :634-649

[4]

GONZALEZ SANCHEZ T, 1991, SEMICOND SCI TECH, V6, P862, DOI 10.1088/0268-1242/6/9/005

[5]

GONZALEZ SANCHEZ T, 1992, SEMICOND SCI TECH, V7, P31, DOI 10.1088/0268-1242/7/1/006

[6] MONTE-CARLO ANALYSIS OF NOISE SPECTRA IN SCHOTTKY-BARRIER DIODES [J].

GONZALEZ, T ;

PARDO, D ;

VARANI, L ;

REGGIANI, L .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3040-3042

[7] MONTE-CARLO ANALYSIS OF THE BEHAVIOR AND SPATIAL ORIGIN OF ELECTRONIC NOISE IN GAAS-MESFETS [J].

GONZALEZ, T ;

PARDO, D ;

VARANI, L ;

REGGIANI, L .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :991-998

[8] A MICROSCOPIC INTERPRETATION OF HOT-ELECTRON NOISE IN SCHOTTKY-BARRIER DIODES [J].

GONZALEZ, T ;

PARDO, D ;

VARANI, L ;

REGGIANI, L .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) :580-583

[9]

Hockney R. W., 1988, COMPUTER SIMULATIONS

[10] THE MONTE-CARLO METHOD FOR THE SOLUTION OF CHARGE TRANSPORT IN SEMICONDUCTORS WITH APPLICATIONS TO COVALENT MATERIALS [J].

JACOBONI, C ;

REGGIANI, L .

REVIEWS OF MODERN PHYSICS, 1983, 55 (03) :645-705

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