Influence of growth temperature on the morphology and luminescence of Ga2O3:Mn nanowires

被引：10

作者：

Gonzalo, Alicia ^{[1
]}

Nogales, Emilio ^{[1
]}

Mendez, Bianchi ^{[1
]}

Piqueras, Javier ^{[1
]}

机构：

[1] Univ Complutense Madrid, Dept Fis Mat, Avda Complutense S-N, Madrid 28040, Spain

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2014年 / 211卷 / 02期

关键词：

Ga2O3:Mn nanowires; morphology; luminescence; GALLIUM OXIDE; PHOTOLUMINESCENCE; BETA-GA2O3;

D O I：

10.1002/pssa.201300310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mn doped -Ga2O3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 degrees C. The morphology of the resulting structures has been found to depend on this temperature, as observed in the images obtained with scanning electron microscopy. The structures grown on the sample at 1500 degrees C are both isolated microrods and interconnected rods. At lower temperatures, 1300 and 1400 degrees C, nanowires with widths of about 100nm and stair-shaped microcrystals were found. Raman analysis demonstrates that both nanowires and microrods present the -Ga2O3 crystal structure. In addition, Mn related light emission has been found to depend on the growth temperature. The assessment of luminescence properties have been carried out by cathodoluminescence analysis. The results show an intense orange emission in the nanowires and green emission in the microrods. These bands are associated to the manganese ions incorporated into the gallium oxide crystal lattice.

引用

页码：494 / 497

页数：4

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