Semiconductor profiling with sub-nm resolution: Challenges and solutions

被引：63

作者：

Vandervorst, W. ^{[1
,2
]}

机构：

[1] Imec, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium

来源：

APPLIED SURFACE SCIENCE | 2008年 / 255卷 / 04期

关键词：

SIMS; Depth resolution; Cluster beams; Atomprobe; Surface transients; Semiconductors;

D O I：

10.1016/j.apsusc.2008.05.090

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The application of secondary ion mass spectrometry in recent semiconductor applications has highlighted the need for extremely high depth resolution. The depth resolution limitations arise from the high dose, energetic interactions of the primary ion with the sample, leading to pro. le distortions due to the primary incorporation process and the collision cascades. Evolutionary and revolutionary approaches are presently proposed as potential solutions to achieve the ultimate in depth resolution. Evolutionary concepts are based on using extremely low bombardment energies (similar to 100 eV) and/or cluster beams whereas revolutionary concepts such as zero-energy SIMS and the tomographic atomprobe remove the primary ion beam completely. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：805 / 812

页数：8

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