Improvement of optical properties of air-exposed regrowth interfaces embedded in InAs quantum dots and GaAs/AlGaAs quantum wells by atomic hydrogen

被引：12
作者：
Kim, JS [1 ]
Kawabe, M [1 ]
Koguchi, N [1 ]
机构：
[1] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050047, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 1A-B期
关键词：
atomic hydrogen etching/cleaning; GaAs quantum wells (QWs); InAs quantum dots (QDs); regrowth; photoluminescence (PL); molecular beam epitaxy (MBE);
D O I：
10.1143/JJAP.43.L103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an atomic hydrogen cleaning effect on surface oxide and contaminants on airexposed interfaces embedded in GaAs quantum well (QW) and InAs quantum dot (QD). A partly grown GaAs QW and a GaAs buffer layer for InAs QDs were airexposed and hydrogen cleaned. After this procedure, we directly regrew a GaAs QW and InAs QDs as an active layer. Removal of surface oxide was monitored by reflection high-energy electron diffraction. The cleaned surface showed beta(2 x 4) reconstruction. The photoluminescence properties of GaAs/AlGaAs QWs and InAs/GaAs QDs showed no degradation compared with those of the reference samples, even though the air-exposed interfaces were included in the active regions.
引用
收藏
页码：L103 / L104
页数：2
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