Characterization of planar semipolar gallium nitride films on sapphire substrates

被引：198
作者：
Baker, TJ [1 ]
Haskell, BA
Wu, F
Speck, JS
Nakamura, S
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Elect Engn, Santa Barbara, CA 93106 USA
[3] Univ Calif Santa Barbara, JST, ERATO, NICP, Santa Barbara, CA 93106 USA
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 4-7期
关键词：
semipolar; GaN; nonpolar; sapphire;
D O I：
10.1143/JJAP.45.L154
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Specular, planar semipolar gallium nitride films were grown by hydride vapor phase epitaxy. Planar films of (1013) and (1122) GaN have been grown on (1010) m-plane sapphire. The in-plane epitaxial relationship for (1013) GaN was [3032](GaN) parallel to [1210](sapphire) and [1210](GaN) parallel to [0001](sapphire). The in-plane epitaxial relationship for (1122) GaN was [1121](GaN) parallel to [0001](sapphire) and [1100](GaN) parallel to [1210](sapphire). The (1013) films were determined to have N-face sense polarity and a threading dislocation density of 9 x 10(8) cm(-2). The (1122) films have Ga-face sense polarity and have a threading dislocation density of 2 x 10(10) cm(-2). The basal plane stacking fault density was 2 x 10(5) cm(-1) for both orientations. The RMS roughness of the films was under 10 nm for a 5 x 5 mu m(2) area.
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收藏
页码：L154 / L157
页数：4
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