Boron pileup and clustering in silicon-on-insulator films

被引：16

作者：

Vuong, HH ^{[1
]}

Gossmann, HJ

Pelaz, L

Celler, GK

Jacobson, DC

Barr, D

Hergenrother, J

Monroe, D

Venezia, VC

Rafferty, CS

Hillenius, SJ

McKinley, J

Stevie, FA

Granger, C

机构：

[1] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Lucent Technol, Orlando, FL 32819 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 08期

关键词：

D O I：

10.1063/1.124604

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The dopant-defect interaction in silicon-on-insulator (SOI) material is studied for Si film thicknesses ranging from 60 to 274 nm, with regards to (1) boron pileup and (2) defect-induced boron clustering. Results are obtained on boron-implanted samples and on molecular beam epitaxy-grown deposited-boron samples. The experimental results verify simulations predicting (a) boron pileup at both upper and lower interfaces of the Si film, and (b) no reduction of the boron clustering in SOI compared with bulk silicon. (C) 1999 American Institute of Physics. [S0003-6951(99)05034-2].

引用

页码：1083 / 1085

页数：3

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