Electrical Characterization of Reduced Graphene Oxide deposited on Interdigitated electrodes

被引:0
|
作者
Sihar, Nabihah [1 ]
Dee, Chang-Fu [1 ]
Mohamed, Mohd Ambri [1 ]
Yaw, Tiong Teck [1 ]
Salleh, Muhammad Mat [1 ]
Majlis, Burhanuddin Yeop [1 ]
Abid, Mohd Asyadi Azam Mohd [2 ]
机构
[1] Univ Kebangsaan Malaysia, Inst Microengn & Nanoelect IMEN, Ukm Bangi 43600, Selangor, Malaysia
[2] Univ Tekn Malaysia Melaka UTeM, Fac Mfg Engn FKP, Durian Tunggal 76100, Melaka, Malaysia
关键词
Reduced graphene oxide (rGO); Interdigitated; dielectrophoresis (DEP); Electrical property; PERCOLATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nowadays, reduced graphene oxide (rGO) has been used in many applications because the surface defect density can be controlled compared to pristine graphene. It has a band gap which make it easier to integrate with existing technologies. Though, a simple process and large scale device fabrication is needed to align the rGO during fabrication of device. In this work, dielectrophoresis (DEP) technique has been used to align the rGO on a substrate with interdigitated electrodes. First, the rGO was drop-casted on sample with interdigitated electrodes. Followed by DEP process to align the deposited rGO. Electrical measurement has been done. It shows that the conductivity and current increases with the increased number of drops for rGO solution. SEM image shows a distribution pattern which forms percolation network pathway of rGO. Raman spectroscopy confirmed the presence of rGO in between the channel of electrodes. This simple technique has the potential to be used for future large scale device fabrication.
引用
收藏
页码:332 / 335
页数:4
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