Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source

被引：6

作者：

Oguri, Katsuya ^{[1
]}

Kato, Keiko ^{[1
]}

Nishikawa, Tadashi ^{[1
]}

Gotoh, Hideki ^{[1
]}

Tateno, Kouta ^{[1
]}

Sogawa, Tetsuomi ^{[1
]}

Nakano, Hidetoshi ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 07期

关键词：

III-V; PHOTOEMISSION; STATES; PHOTOVOLTAGE; GENERATION; DENSITIES;

D O I：

10.1143/JJAP.51.072401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron-hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation. (C) 2012 The Japan Society of Applied Physics

引用

页数：6

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