Time-Resolved Surface Photoelectron Spectroscopy of Photoexcited Electron and Hole Dynamics on GaAs Using 92 eV Laser Harmonic Source

被引：6
作者：
Oguri, Katsuya [1 ]
Kato, Keiko [1 ]
Nishikawa, Tadashi [1 ]
Gotoh, Hideki [1 ]
Tateno, Kouta [1 ]
Sogawa, Tetsuomi [1 ]
Nakano, Hidetoshi [1 ]
机构：
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 07期
关键词：
III-V; PHOTOEMISSION; STATES; PHOTOVOLTAGE; GENERATION; DENSITIES;
D O I：
10.1143/JJAP.51.072401
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have developed a time-resolved surface photoelectron spectroscopy system based on a 1.5 eV laser-pump and 92 eV high-order harmonic probe configuration that enables us to measure the electron and hole dynamics on a semiconductor surface. Core-level photoelectron spectra of GaAs(001) were successfully obtained with a single 59th harmonic, which was selected by using a pair of Mo/Si multilayer mirrors with a narrow reflection bandwidth. We observed transient energy shifts of the Ga 3d core level photoelectron peak of approximately 200 meV towards a higher binding energy, indicating that the surface potential changed due to the spatial separation of electron-hole pairs generated by the laser irradiation. The relatively slow recovery of the Ga 3d core level shift with a time constant of a few ns is dominated by the recombination process of the excess surface charges generated by the laser irradiation. (C) 2012 The Japan Society of Applied Physics
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页数：6
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