Design of a plasmonic back reflector for silicon nanowire decorated solar cells

被引:19
作者
Ren, Rui [1 ,2 ]
Guo, Yongxin [1 ]
Zhu, Rihong [2 ]
机构
[1] Natl Univ Singapore, Dept Elect & Comp Engn, Singapore 117583, Singapore
[2] Nanjing Univ Sci & Technol, Sch Elect Engn & Optoelect Tech, Nanjing 210094, Jiangsu, Peoples R China
关键词
Zinc oxide - II-VI semiconductors - Silicon solar cells - Infrared devices - Reflection - Silicon compounds - Nitrogen compounds - Absorption spectroscopy - Nanowires - Silicon - Silver - Thin film solar cells;
D O I
10.1364/OL.37.004245
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
This Letter presents a crystalline silicon thin film solar cell model with Si nanowire arrays surface decoration and metallic nanostructure patterns on the back reflector. The nanostructured Ag back reflector can significantly enhance the absorption in the near-infrared spectrum. Furthermore, by inserting a ZnO:Al layer between the silicon substrate and nanostructured Ag back reflector, the absorption loss in the Ag back reflector can be clearly depressed, contributing to a maximum J(sc) of 28.4 mA/cm(2). A photocurrent enhancement of 22% is achieved compared with a SiNW solar cell with a planar Ag back reflector. (C) 2012 Optical Society of America
引用
收藏
页码:4245 / 4247
页数:3
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