Q-Band and W-Band Power Amplifiers in 45-nm CMOS SOI

被引：32

作者：

Kim, Joohwa ^{[1
]}

Dabag, Hayg ^{[1
]}

Asbeck, Peter ^{[1
]}

Buckwalter, James F. ^{[1
]}

机构：

[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2012年 / 60卷 / 06期

关键词：

Millimeter wave (mm wave); mm-wave power amplifier (PA); Q-band; silicon-on-insulator (SOI); silicon RF integrated circuit (RFIC); W-band; PAE;

D O I：

10.1109/TMTT.2012.2193593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The performance of high-efficiency millimeter-wave (mm-wave) power amplifiers (PAs) implemented in a 45-nm silicon-on-insulator (SOI) process is presented. Multistage class-AB designs are investigated for Q- and W-bands and a push-pull amplifier is investigated at Q-band. The Q-band, class-AB PA achieves a saturated output power of 15 dBm and power-added efficiency (PAE) of 27% from a 2-V supply. The W-band, class-AB PA achieves a saturated output power of 12.4 dBm and PAE of 14.2% from a 2-V supply. The performance demonstrates the high efficiency possible for mm-wave PAs in a SOI process.

引用

页码：1870 / 1877

页数：8

共 17 条

[1]

[Anonymous], 2011, IEEE INT C COMMUNICA

[2] W-Band Amplifiers With 6-dB Noise Figure and Milliwatt-Level 170-200-GHz Doublers in 45-nm CMOS [J].

Cetinoneri, Berke ;

Atesal, Yusuf A. ;

Fung, Andy ;

Rebeiz, Gabriel M. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (03) :692-701

[3] A Compact W-Band CMOS Power Amplifier With Gain Boosting and Short-Circuited Stub Matching for High Power and High Efficiency Operation [J].

Chan, Doris A. ;

Feng, Milton .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2011, 21 (02) :98-100

[4] A 58-65 GHz Neutralized CMOS Power Amplifier With PAE Above 10% at 1-V Supply [J].

Chan, Wei L. ;

Long, John R. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2010, 45 (03) :554-564

[5] A Wideband High-Efficiency 79-97 GHz SiGe Linear Power Amplifier with > 90 mW Output [J].

Chang, Michael ;

Rebeiz, Gabriel M. .

PROCEEDINGS OF THE 2008 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2008, :69-+

[6]

Dabag HT, 2011, IEEE BIPOL BICMOS, P25, DOI 10.1109/BCTM.2011.6082742

[7] A W-Band Medium Power Amplifier in 90 nm CMOS [J].

Jiang, Yu-Sian ;

Tsai, Jeng-Han ;

Wang, Huei .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2008, 18 (12) :818-820

[8]

Jin-Ho Kim, 2010, 2010 14th Biennial IEEE Conference on Electromagnetic Field Computation (CEFC 2010), DOI 10.1109/CEFC.2010.5481044

[9] A 19.4 dBm, Q-Band Class-E Power Amplifier in a 0.12 μm SiGe BiCMOS Process [J].

Kalantari, Nader ;

Buckwalter, James F. .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2010, 20 (05) :283-285

[10] A 31-dBm, High Ruggedness Power Amplifier in 65-nm Standard CMOS with High-Efficiency Stacked-Cascode Stages [J].

Leuschner, Stephan ;

Pinarello, Sandro ;

Hodel, Uwe ;

Mueller, Jan-Erik ;

Klar, Heinrich .

2010 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS RFIC SYMPOSIUM, 2010, :395-398

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