Optimized interatomic potential for study of structure and phase transitions in Si-Au and Si-Al systems

被引:43
作者
Starikov, S. [1 ,2 ]
Gordeev, I. [2 ,3 ]
Lysogorskiy, Y. [1 ]
Kolotova, L. [2 ,4 ]
Makarov, S. [5 ]
机构
[1] Ruhr Univ, Interdisciplinary Ctr Adv Mat Simulat, Bochum, Germany
[2] Joint Inst High Temp RAS, Moscow, Russia
[3] Moscow Inst Phys & Technol, Moscow, Russia
[4] Natl Res Univ Higher Sch Econ, Moscow, Russia
[5] ITMO Univ, St Petersburg, Russia
关键词
Silicon; Phase transition; Interatomic potential; Si-metal alloy; STACKING-FAULT ENERGY; X-RAY-DIFFRACTION; MOLECULAR-DYNAMICS; SURFACE-TENSION; 1ST-PRINCIPLES CALCULATIONS; THERMODYNAMIC PROPERTIES; METALLIC ELEMENTS; THERMAL-EXPANSION; CONDENSED PHASES; LIQUID SILICON;
D O I
10.1016/j.commatsci.2020.109891
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Metal-semiconductor nanostructures are key objects for multifunctional electronics and optical design. We report a new interatomic potential for atomistic simulation of a ternary Si-Au-Al system. The development procedure was based on the force-matching method that allowed us to create the potential without use of experimental data at the fitting. Extensive validation including elastic, thermophysical and defect properties demonstrates a wide range of the potential applicability. Special attention was paid to the description of the silicon-metal alloys in liquid and amorphous states. We used the new potential for study of crystallization and glass transition in the undercooled melt. The simulation results revealed the beneficial conditions for the formation of the unique metal-semiconductor nanocrystalline structure, which is highly important for various applications in the field of nanophotonics.
引用
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页数:13
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