Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

被引：7
|
作者：
Yan, Xin [1 ]
Zhang, Xia [1 ]
Li, Junshuai [1 ]
Cui, Jiangong [1 ]
Wang, Qi [1 ]
Huang, Yongqing [1 ]
Ren, Xiaomin [1 ]
机构：
[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2013年 / 384卷
基金：
中国国家自然科学基金; 对外科技合作项目（国际科技项目）;
关键词：
Nanostructures; Metalorganic chemical vapor deposition; Nanomaterials; Semiconducting III-V materials; Semiconducting silicon; OPTICAL-PROPERTIES; HETEROSTRUCTURES; MECHANISM; EMISSION; SHAPE;
D O I：
10.1016/j.jcrysgro.2013.09.014
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
InAs/GaAs dots-on-nanowire (NW) hybrid heterostructures are grown on Si substrate by metal organic chemical vapor deposition. The formation of InAs quantum dots (QDs) is intimately associated with the NW density as well as the substrate surface properties, both of which strongly affect the surface adatom diffusion. InAs QDs are realized with a short deposition time by reducing the NW density. The QDs exhibit specific facets and pure zinc blonde structure, residing on a wetting layer of several nanometers. Photoluminescence emission from the QDs is observed at room temperature, with a linewidth of 186 meV. The results are promising for future integration of III-V NW hybrid devices, especially photovoltaic cells on Si. (C) 2013 Elsevier B.V. All rights reserved,
引用
收藏
页码：82 / 87
页数：6
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