Evaluation of Submillimeter/Terahertz Camera Performance With the Cryogenic Multi-Channel Read Out System

被引:3
作者
Hibi, Yasunori [1 ]
Matsuo, Hiroshi [1 ]
Sekiguchi, Shigeyuki [1 ]
Ikeda, Hirokazu [2 ]
Fujiwara, Mikio [3 ]
机构
[1] Natl Inst Nat Sci, Natl Astron Observ Japan, Mitaka, Tokyo 1818588, Japan
[2] Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Sagamihara, Kanagawa 2298510, Japan
[3] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1847895, Japan
基金
日本学术振兴会;
关键词
Application specific integrated circuits (ASICs); cryogenic electronics; gallium-arsenide JFETs (GaAs-JFETs); imaging sensors; multichip modules; superconducting tunnel junction detectors; GAAS JFET; TEMPERATURE; MILLIMETER; DETECTORS; ARRAY;
D O I
10.1109/TTHZ.2013.2258714
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The purpose of our development is to realize the terahertz camera with superconducting tunnel junction detectors and cryogenic integrated circuits made of gallium-arsenide junction field-effect transistors (GaAs-JFET). This paper presents the first demonstration of such system. First, we have combined cryogenic charge integrating amplifiers made of GaAs-JFETs with the superconductor-insulator-superconductor (SIS) photon detectors at 0.5 K, and the detector current was successfully read out by the cryogenic amplifiers. Secondly, we have demonstrated an operation of a 32-channelmulti-chipmodule all made of the GaAs-JFET circuits. The module has 32-channel detector input ports and two read out multiplexers for fast sampling. The power dissipation is about 350 mu W. Using 910 k Omega resistors in place of detectors we measured output voltage noise of 3 mV(rms) with a charge integration time of 1 ms,. From these results, we have proven the terahertz camera technologies using SIS photon detectors and cryogenic read out electronics with the noise equivalent power (NEP) of 3.8 x 10(-15) W/Hz(0.5) and 1 kHz frame rate.
引用
收藏
页码:422 / 427
页数:6
相关论文
共 19 条
[1]   Characterization of an STJ-based direct detector of submillimeter waves [J].
Ariyoshi, S ;
Matsuo, H ;
Otani, C ;
Sato, H ;
Shimizu, HM ;
Kawase, K ;
Noguchi, T .
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY, 2005, 15 (02) :920-923
[2]   Performance of GaAs JFET at a cryogenic temperature for application to readout circuit of high-impedance detectors [J].
Fujiwara, M ;
Sasaki, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (12) :2042-2047
[3]   The Cryogenic Multi-Channel Readout System for Submillimeter/Terahertz Cameras [J].
Hibi, Y. ;
Matsuo, H. ;
Nagata, H. ;
Ikeda, H. ;
Fujiwara, M. .
JOURNAL OF LOW TEMPERATURE PHYSICS, 2012, 167 (5-6) :684-688
[4]  
Hibi Y., 2011, NRAO ONL P NRAO LIB, P95
[5]  
Hibi Y., 2010, P SPIE, V7854
[6]   The Cryogenic Digital Readout Module with GaAs JFET ICs [J].
Hibi, Yasunori ;
Matsuo, Hiroshi ;
Nagata, Hirohisa ;
Ikeda, Hirokazu ;
Fujiwara, Mikio .
LOW TEMPERATURE DETECTORS LTD 13, 2009, 1185 :290-+
[7]   The cryogenic multiplexer and shift register for submillimeter-wave digital camera [J].
Hibi, Yasunori ;
Matsuo, Hiroshi ;
Arai, Hideaki ;
Nagata, Hirohisa ;
Ikeda, Hirokazu ;
Fujiwara, Mikio .
CRYOGENICS, 2009, 49 (11) :672-675
[8]  
Irwin KD, 2005, TOP APPL PHYS, V99, P63
[9]   Realization of submillimeter-wave imaging array with superconducting direct detectors [J].
Matsuo, H. ;
Mori, Y. ;
Murakoshi, Y. ;
Ariyoshi, S. ;
Ezawa, H. ;
Hibi, Y. ;
Kobayashi, J. ;
Nagata, H. ;
Nakahashi, M. ;
Otani, C. .
JOURNAL OF LOW TEMPERATURE PHYSICS, 2008, 151 (1-2) :304-309
[10]  
Matsuo H., 2006, P SOC PHOTO-OPT INS, V6275