Optimization study of halo doped MOSFETs

被引：3

作者：

Song, D ^{[1
]}

Lim, JH ^{[1
]}

Lee, K ^{[1
]}

Park, YJ ^{[1
]}

Min, HS ^{[1
]}

机构：

[1] SEOUL NATL UNIV,DEPT ELECTR,KWANAK GU,SEOUL 151742,SOUTH KOREA

来源：

SOLID-STATE ELECTRONICS | 1996年 / 39卷 / 06期

关键词：

D O I：

10.1016/0038-1101(95)00201-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the hot carrier degradation behavior of the halo doped MOSFETs is investigated and an optimized halo design, taking into account the hot carrier reliability, is proposed. Conventional LDD MOSFETs and halo MOSFETs with the variations in LDD n - dose and halo dose are fabricated. The degradations of the threshold voltage and the drain saturation current under hot carrier stress (DAHC and CHC) conditions are measured and analyzed. Device simulations are also carried out to cover a wider range than the experiments. In order to obtain the improved device characteristics in hot carrier effects as well as short channel effects, the halo design should be carefully optimized.

引用

页码：923 / 927

页数：5

共 8 条

[1]

Codella C. F., 1985, International Electron Devices Meeting. Technical Digest (Cat. No. 85CH2252-5), P230

[2]

Duvvury C., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P215, DOI 10.1109/IEDM.1990.237190

[3]

Hori A., 1992, International Electron Devices Meeting 1992. Technical Digest (Cat. No.92CH3211-0), P699, DOI 10.1109/IEDM.1992.307455

[4]

Hori T., 1988, International Electron Devices Meeting. Technical Digest (IEEE Cat. No.88CH2528-8), P394, DOI 10.1109/IEDM.1988.32839

[5] OPTIMUM DESIGN OF N+-N- DOUBLE-DIFFUSED DRAIN MOSFET TO REDUCE HOT-CARRIER EMISSION [J].

KOYANAGI, M ;

KANEKO, H ;

SHIMIZU, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :562-570

[6]

*TECHN MOD ASS INC, 1994, TSUPREM 4 VERS 6 1

[7]

*TECHN MOD ASS INC, 1994, MEDICI VERS 2 0

[8] FABRICATION OF HIGH-PERFORMANCE LDDFETS WITH OXIDE SIDEWALL-SPACER TECHNOLOGY [J].

TSANG, PJ ;

OGURA, S ;

WALKER, WW ;

SHEPARD, JF ;

CRITCHLOW, DL .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) :590-596

← 1 →