Channel doping-dependent analytical model for symmetric double gate metal-oxide-semiconductor field-effect transistor. I. Extraction of subthreshold characteristics

被引：4
作者：
Cho, Edward Namkyu [1 ]
Shin, Yong Hyeon [1 ]
Yun, Ilgu [1 ]
机构：
[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
来源：
JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 21期
关键词：
DG MOSFETS; THRESHOLD-VOLTAGE; DRAIN-CURRENT; CMOS; DESIGN;
D O I：
10.1063/1.4808452
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An analytical 2D model of subthreshold current (I-DSsub), subthreshold swing (S-sub), and threshold voltage (V-TH) roll-off with a variation of channel doping concentration (N-A) for symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the channel potential is obtained by solving the 2D Poisson's equation with the help of the evanescent method. Based on the obtained channel potential, I-DSsub, S-sub, and V-TH roll-off expressions are derived in the analytical model. It is shown that the subthreshold characteristics predicted by the analytical model are in good agreement with commercially available 2D numerical simulation results for different channel length (L), channel film thickness (t(si)), gate oxide (t(ox)), and N-A. (C) 2013 AIP Publishing LLC.
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页数：7
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