Highly Stable Chemical N-doping of Graphene Nanomesh FET

被引：0

作者：

Al-Mumen, Haider ^{[1
,2
]}

Dong, Lixin ^{[1
]}

Li, Wen ^{[1
]}

Al-Mumen, Haider ^{[1
,2
]}

机构：

[1] Michigan State Univ, Elect & Comp Engn, E Lansing, MI 48824 USA

[2] Univ Babylon, Dept Elect Engn, Babylon, Iraq

来源：

2014 9TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2014年

关键词：

graphene; transistor; nanomesh; doping; DOPED GRAPHENE; SCATTERING; DOPANTS; SURFACE; CARBON; LAYER;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

引用

页码：72 / 76

页数：5

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