Highly Stable Chemical N-doping of Graphene Nanomesh FET

被引：0

作者：

Al-Mumen, Haider ^{[1
,2
]}

Dong, Lixin ^{[1
]}

Li, Wen ^{[1
]}

Al-Mumen, Haider ^{[1
,2
]}

机构：

[1] Michigan State Univ, Elect & Comp Engn, E Lansing, MI 48824 USA

[2] Univ Babylon, Dept Elect Engn, Babylon, Iraq

来源：

2014 9TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2014年

关键词：

graphene; transistor; nanomesh; doping; DOPED GRAPHENE; SCATTERING; DOPANTS; SURFACE; CARBON; LAYER;

D O I：

暂无

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.

引用

页码：72 / 76

页数：5

共 50 条

[31] Air-stable n-type doping of graphene from overlying Si3N4 film [J].

Wang, Zegao ;

Li, Pingjian ;

Chen, Yuanfu ;

Liu, Jingbo ;

Qi, Fei ;

Tian, Hongjun ;

Zheng, Binjie ;

Zhou, Jinhao .

APPLIED SURFACE SCIENCE, 2014, 307 :712-715

[32] Highly efficient and stable cupronickel nanomesh electrode for flexible organic photovoltaic devices [J].

Kim, Han-Jung ;

Song, Myungkwan ;

Jeong, Jun-Ho ;

Kim, Chang Su ;

Surabhi, Srivathsava ;

Jeong, Jong-Ryul ;

Kim, Dong-Ho ;

Choi, Dae-Geun .

JOURNAL OF POWER SOURCES, 2016, 331 :22-25

[33] Graphene coating magnetite/N-doping carbon hybrid composites and its lithium storage performance [J].

Xu, Wenjun ;

Xue, Weidong ;

Zhang, Yu ;

Zhang, Bin ;

Wang, Yuan ;

Zhao, Rui .

MATERIALS LETTERS, 2018, 231 :47-50

[34] Simultaneous reduction and N-doping of graphene oxides by low-energy N2+ ion sputtering [J].

Zhang, Liang ;

Ye, Yifan ;

Cheng, Dingling ;

Zhang, Wenhua ;

Pan, Haibin ;

Zhu, Junfa .

CARBON, 2013, 62 :365-373

[35] Defect-Free Mechanical Graphene Transfer Using n-Doping Adhesive Gel Buffer [J].

Seo, Young-Min ;

Jang, Wonseok ;

Gu, Taejun ;

Seok, Hae-Jun ;

Han, Seunghun ;

Choi, Byoung Lyong ;

Kim, Han-Ki ;

Chae, Heeyeop ;

Kang, Joohoon ;

Whang, Dongmok .

ACS NANO, 2021, 15 (07) :11276-11284

[36] Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping [J].

Tao Wang ;

Yunhao Lu ;

Y.P. Feng .

Journal of the Korean Physical Society, 2016, 68 :833-838

[37] Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping [J].

Wang, Tao ;

Lu, Yunhao ;

Feng, Y. P. .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 68 (07) :L833-L838

[38] Evidence of Unintentional n-Doping in ZnO Nanorods [J].

Kovalenko, Artem ;

Pourroy, Genevieve ;

Cregut, Olivier ;

Gallart, Mathieu ;

Hoenerlage, Bernd ;

Gilliot, Pierre .

JOURNAL OF PHYSICAL CHEMISTRY C, 2010, 114 (20) :9498-9502

[39] Doping of Graphene During Chemical Exfoliation [J].

Srivastava, Pawan Kumar ;

Yadav, Premlata ;

Ghosh, Subhasis .

SOLID STATE PHYSICS, VOL 57, 2013, 1512 :484-485

[40] Preparation of TiO2/graphene composite with appropriate N-doping ratio for humic acid removal [J].

Ye, Ting ;

Chen, Wei ;

Xu, Hang ;

Geng, Nannan ;

Cai, Yan .

JOURNAL OF MATERIALS SCIENCE, 2018, 53 (01) :613-625

← 1 2 3 4 5 →