Highly Stable Chemical N-doping of Graphene Nanomesh FET

被引：0
作者：
Al-Mumen, Haider [1 ,2 ]
Dong, Lixin [1 ]
Li, Wen [1 ]
Al-Mumen, Haider [1 ,2 ]
机构：
[1] Michigan State Univ, Elect & Comp Engn, E Lansing, MI 48824 USA
[2] Univ Babylon, Dept Elect Engn, Babylon, Iraq
来源：
2014 9TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS (NEMS) | 2014年
关键词：
graphene; transistor; nanomesh; doping; DOPED GRAPHENE; SCATTERING; DOPANTS; SURFACE; CARBON; LAYER;
D O I：
暂无
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
N-type doping of graphene with long-term air stability represents a significant challenge for practical application of graphene electronics. This paper reports a reversible doping method that uses SU-8 photoresist as a doping and encapsulating material to enable highly air-stable n-type semiconducting properties of graphene. The SU-8 resist simultaneously serves as an effective electron dopant, a dielectric medium, and an excellent encapsulating layer. The air-stable n-type characteristics of the as-doped graphene were verified by Raman spectra and transport properties. The SU-8 doping has minimum damage to the hexagonal lattice of graphene and can be reversed by removing the uncrosslinked SU-8 resist.
引用
收藏
页码：72 / 76
页数：5
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