The effect of annealing temperature on the piezoelectric and dielectric properties of lead-free Bi0.5(Na0.85K0.15)0.5TiO3 thin films

被引：5
作者：
Won, Sung Sik [1 ]
Ahn, Chang Won [1 ]
Kim, Ill Won [1 ]
机构：
[1] Univ Ulsan, Dept Phys & Energy, Harvest Storage Res Ctr, Ulsan 680749, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2012年 / 61卷 / 06期
基金：
新加坡国家研究基金会;
关键词：
Piezoelectric; Bi-0.5(Na0.85K0.15)(0.5)TiO3; Thin Films; Sol-gel; Lead-free; SINTERING TEMPERATURE; CERAMICS; BEHAVIOR; SYSTEM;
D O I：
10.3938/jkps.61.928
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We fabricated Bi-0.5(Na0.85K0.15)(0.5)TiO3 (BNKT) lead-free thin films on Pt(111)/TiO2/SiO2/Si(100) substrates by using a chemical solution deposition method. The BNKT thin films were annealed at 650, 700, 750, or 800 A degrees C in an O-2 atmosphere. X-ray diffraction patterns revealed a pure perovskite structure at annealing temperatures from 650 to 800 A degrees C. A field emission electron microscope study revealed an increase in grain size with increasing annealing temperature. BNKT thin films annealed at 700 A degrees C had a high remnant effective piezoelectric coefficient of 63.6 pm/V and a low leakage current density of 5.15 x 10(-6) A/cm(2).
引用
收藏
页码：928 / 932
页数：5
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