Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure

被引：15
作者：
Jia, Y [1 ]
Zurbuchen, MA
Wozniak, S
Carim, AH
Schlom, DG
Zou, LN
Briczinski, S
Liu, Y
机构：
[1] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA
[2] Penn State Univ, Dept Phys, University Pk, PA 16802 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期
关键词：
D O I：
10.1063/1.124194
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Epitaxial Ba2RuO4 films with the K2NiF4 structure have been grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction and cross-sectional transmission electron microscopy results indicate that the films are c-axis oriented, single-domain, and contain relatively few stacking faults and intergrowths. Electrical measurements indicate metallic conductivity to low temperatures, but no evidence of superconductivity. (C) 1999 American Institute of Physics. [S0003-6951(99)04923-2].
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页码：3830 / 3832
页数：3
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