InN/InGaN quantum dot photoelectrode: Efficient hydrogen generation by water splitting at zero voltage

被引:64
作者
ul Hassan Alvi, Naveed [1 ]
Soto Rodriguez, Paul Eduardo David [1 ]
Aseev, Pavel [1 ]
Jesus Gomez, Victor [1 ]
Alvi, Ameed ul Hassan [2 ]
ul Hassan, Waheed [3 ]
Willander, Magnus [4 ]
Noetzel, Richard [5 ,6 ]
机构
[1] Univ Politecn Madrid, ETSI Telecomunicac, ISOM Inst Syst Based Optoelect & Microtechnol, E-28040 Madrid, Spain
[2] Univ Agr Faisalabad, Dept Phys, Faisalabad 38000, Pakistan
[3] Bahauddin Zakariya Univ, Dept Chem, Multan 60000, Pakistan
[4] Linkoping Univ, Dept Sci & Technol ITN, S-60174 Norrkoping, Sweden
[5] Univ Milano Bicocca, L NESS, I-20125 Milan, Italy
[6] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy
关键词
InGaN; InN; Quantum dots; Photoelect rode; Water splitting; Hydrogen generation; MOLECULAR-BEAM EPITAXY; GRAPHENE OXIDE; NANOWIRE ARRAYS; ACCUMULATION; ALPHA-FE2O3; INGAN; LEVEL; CELLS; INN;
D O I
10.1016/j.nanoen.2015.02.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Light to hydrogen conversion via water splitting is of immense interest as a clean, storable, and InN; renewable energy source (Tachibana et al., 2012 [1]; Maeda and Domen, 2010 [2]; van de Krol et al., Quantum dots; 2008 [3]; van Dorp et al., 2009 [4]; Kudo and Miseki, 2009 [5]) but efficient materials need to be found. Photoelect rode; To solve, InGaN has properties ideally suited and we demonstrate here that epitaxial InN quantum dots Water splitting; Hydrogen generation (QDs) more than double the photoelectrochemical (PEC) water splitting efficiency of an In0.54Ga046N photoelectrode. The InN/In0.54Ga0.46N-QDs-photoelectrode reveals a maximum incident-photon-tocurrent-conversion efficiency (IPCE) of up to 56% at a wavelength of 600 nm with hydrogen generation rate of 133 mot h(-1) cm(-2) at zero voltage under illumination of a 1000W Xenon arc lamp. The bare In0.51Ga0.16N-layer-photoelectrode reveals a much lower IPCE of 24% with hydrogen generation rate of 59 pmol h(-1) cm(-2). (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:291 / 297
页数:7
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