RF transistor macromodeling with substrate effect in power amplifier design

被引：0
|
作者：
El-Sabban, AA
Haddara, H
Ragai, HF
机构：
来源：
PROCEEDINGS OF THE 46TH IEEE INTERNATIONAL MIDWEST SYMPOSIUM ON CIRCUITS & SYSTEMS, VOLS 1-3 | 2003年
关键词：
CMOS; power amplifier; RF transistor modeling; substrate network;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a class AB power amplifier is designed in the 2.45 GHz: frequency band using a standard 0.35 mu m CMOS digital process. The transistor RF modeling Including the substrate effect is emphasized in this design. The power amplifier delivers 24dBm of output power with an efficiency of 34.5%, PAE of 30.5% and a power gain of 9.5dB under 3.3V supply. Effect of pads and bondwires are taken into consideration during the design process. The coil used for tuning purposes is a standard above IC MEMS coil In order to increase the effeciency of the PA. Finally, a comparison between the performance of the PA with and without the external subcircuit is given.
引用
收藏
页码：1307 / 1310
页数：4
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