Structural evolution of Ge2Sb2Te5 films under the 488 nm laser irradiation

被引：25

作者：

Fu, Jing ^{[1
]}

Shen, Xiang ^{[1
]}

Xu, Yinsheng ^{[1
]}

Wang, Guoxiang ^{[1
]}

Nie, Qiuhua ^{[1
]}

Lin, Changgui ^{[1
]}

Dai, Shixun ^{[1
]}

Xu, Tiefeng ^{[1
]}

Wang, Rongping ^{[2
]}

机构：

[1] Ningbo Univ, Fac Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China

[2] Australian Natl Univ, Laser Phys Ctr, Res Sch Phys Sci & Engn, Canberra, ACT 0200, Australia

来源：

MATERIALS LETTERS | 2012年 / 88卷

基金：

对外科技合作项目（国际科技项目）;

关键词：

Microstructure; Phase transformation; Raman; XRD; RAMAN-SPECTROSCOPY; PHASE-CHANGES; CRYSTALLIZATION;

D O I：

10.1016/j.matlet.2012.08.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ge2Sb2Te5 films were locally crystallized by a tightly focused laser beam and the structural evolution was studied by Raman scatting. The marks recorded by a broad range of laser power were studied by optical microscope. Raman spectra of films with irradiation power of 0.1 mW and 1 mW were consistent with those of films annealed at 140 degrees C and 400 degrees C, respectively. It reveals that both the cubic and hexagonal crystalline phases have been achieved under the irradiation of 488 nm laser in amorphous Ge2Sb2Te5 films. Specifically, the appearance of a new band of similar to 141 cm(-1) in films with irradiation power larger than 1.25 mW confirms that the over-irradiation causes the segregation of Te crystalline phase in films. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：148 / 151

页数：4

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