Prospects of Using In-Containing Semiconductor Materials in Magnetic Field Sensors for Thermonuclear Reactor Magnetic Diagnostics

被引：16

作者：

Bolshakova, Inessa ^{[2
]}

Vasilevskii, Ivan ^{[3
]}

Viererbl, Ladislav ^{[4
]}

Duran, Ivan ^{[1
]}

Kovalyova, Nelli ^{[2
]}

Kovarik, Karel ^{[1
]}

Kost, Yaroslav ^{[2
]}

Makido, Olena ^{[2
]}

Sentkerestiova, Jana ^{[5
]}

Shtabalyuk, Agata ^{[2
]}

Shurygin, Fedir ^{[2
]}

机构：

[1] Assoc EURATOM IPP CR Praha, Inst Plasma Phys AS CR, Prague, Czech Republic

[2] Lviv Polytech Natl Univ, Magnet Sensor Lab, Lvov, Ukraine

[3] Natl Res Nucl Univ MEPhI, Moscow, Russia

[4] Res Ctr Rez, Husinec Rez, Czech Republic

[5] Czech Tech Univ, Fac Nucl Sci & Phys Engn, Prague, Czech Republic

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2013年 / 49卷 / 01期

关键词：

III-V semiconductor materials; magnetic sensors; neutron radiation effects; radiation-resistant Hall sensors; ELECTRICAL-PROPERTIES; FERMI-LEVEL; MODEL;

D O I：

10.1109/TMAG.2012.2217482

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The work presents the results of experimental investigation into the effect of neutron irradiation on thin-film magnetic field Hall sensors. It is shown that sensors based on InSb/i-GaAs heterostructures are promising for application under radiation conditions in thermonuclear reactor magnetic diagnostics systems. At the same time, the presence of buffer layers in InAs/i-GaAs heterostructures makes this material unfit for application under neutron flux conditions.

引用

页码：50 / 53

页数：4

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