Copper Anisotropy Effects in Three-Dimensional Integrated Circuits Using Through-Silicon Vias (vol 12, pg 225, 2012)

被引：0
|
作者：
Karmarkar, Aditya P. [1 ]
Xu, Xiaopeng [2 ]
Yeap, Kong-Boon [3 ]
Zschech, Ehrenfried [3 ]
机构：
[1] Synopsys India Private Ltd, Hyderabad 500032, Andhra Pradesh, India
[2] Synopsys Inc, Mountain View, CA 94043 USA
[3] Fraunhofer Inst Nondestruct Testing, D-01109 Dresden, Germany
来源：
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2012年 / 12卷 / 03期
关键词：
D O I：
10.1109/TDMR.2012.2209531
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：582 / 582
页数：1
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