Memtransistors Based on Nanopatterned Graphene Ferroelectric Field-Effect Transistors

被引：10

作者：

Dragoman, Mircea ^{[1
]}

Dinescu, Adrian ^{[1
]}

Nastase, Florin ^{[1
]}

Dragoman, Daniela ^{[2
,3
]}

机构：

[1] Natl Inst Res & Dev Microtechnol IMT, Str Erou Iancu Nicolae 126 A, Voluntari 077191, Romania

[2] Univ Bucharest, Phys Fac, POB MG 11, Bucharest 077125, Romania

[3] Acad Romanian Scientists, Str Ilfov 3, Bucharest 050044, Romania

来源：

NANOMATERIALS | 2020年 / 10卷 / 07期

关键词：

graphene; HfO2-based ferroelectrics; memtransistors; MEMRISTOR;

D O I：

10.3390/nano10071404

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The ultimate memristor, which acts as resistive memory and an artificial neural synapse, is made from a single atomic layer. In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO2-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.

引用

页码：1 / 7

页数：7

共 50 条

[31] A review for compact model of graphene field-effect transistors
卢年端
汪令飞
李泠
刘明
Chinese Physics B, 2017, (03) : 100 - 117
[32] Polymeric semiconductor/graphene hybrid field-effect transistors
Huang, Jia
Hines, Daniel R.
Jung, Byung Jun
Bronsgeest, Merijntje S.
Tunnell, Andrew
Ballarotto, Vince
Katz, Howard E.
Fuhrer, Michael S.
Williams, Ellen D.
Cumings, John
ORGANIC ELECTRONICS, 2011, 12 (09) : 1471 - 1476
[33] Optical and thermal properties of graphene field-effect transistors
Freitag, Marcus
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2010, 247 (11-12): : 2895 - 2903
[34] Field-Effect Transistors Based on Single-Layer Graphene and Graphene-Derived Materials
Simionescu, Octavian-Gabriel
Avram, Andrei
Adiaconita, Bianca
Preda, Petruta
Parvulescu, Catalin
Nastase, Florin
Chiriac, Eugen
Avram, Marioara
MICROMACHINES, 2023, 14 (06)
[35] Inkjet Printed Graphene-based Field-effect Transistors on Flexible Substrate
Monne, Mahmuda Akter
Enuka, Evarestus
Wang, Zhuo
Chen, Maggie Yihong
LOW-DIMENSIONAL MATERIALS AND DEVICES 2017, 2017, 10349
[36] Photoelectric Memory Effect in Graphene Heterostructure Field-Effect Transistors Based on Dual Dielectrics
Choi, Hyun Ho
Park, Jaesung
Huh, Sung
Lee, Seong Kyu
Moon, Byungho
Han, Sang Woo
Hwang, Chanyong
Cho, Kilwon
ACS PHOTONICS, 2018, 5 (02): : 329 - 336
[37] Low-frequency noise in graphene field-effect transistors
Rumyantsev, S.
Liu, G.
Stillman, W.
Kachorovskii, V. Yu.
Shur, M. S.
Balandin, A. A.
2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF), 2011, : 234 - 237
[38] Investigation on MetalOxide Graphene Field-Effect Transistors With Clamped Geometries
Giambra, Marco A.
Benz, Christian
Wu, Fan
Thuermer, Maximillian
Balachandran, Geethu
Benfante, Antonio
Pernice, Riccardo
Pandey, Himadri
Boopathi, Muraleetharan
Jang, Min-Ho
Ahn, Jong-Hyun
Stivala, Salvatore
Calandra, Enrico
Arnone, Claudio
Cusumano, Pasquale
Busacca, Alessandro
Pernice, Wolfram H. P.
Danneau, Romain
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2019, 7 (01): : 964 - 968
[39] Graphene Field-Effect Transistors With High Extrinsic fT and fmax
Bonmann, Marlene
Asad, Muhammad
Yang, Xinxin
Generalov, Andrey
Vorobiev, Andrei
Banszerus, Luca
Stampfer, Christoph
Otto, Martin
Neumaier, Daniel
Stake, Jan
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (01) : 131 - 134
[40] Sensing with liquid-gated graphene field-effect transistors
Fu, Wangyang
Nef, Cornelia
Tarasov, Alexey
Wipf, Mathias
Stoop, Ralph
Knopfmacher, Oren
Weiss, Markus
Calame, Michel
Schoenenberger, Christian
2012 12TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2012,

← 1 2 3 4 5 →